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SensArray products are customized to fit the needs of nearly all semiconductor equipment. Each combination requires a very specific Process Probe wafer due to the varying temperatures, chemistries, and build of the chamber. By choosing the manufacturer of your equipment, you'll be able to find the SensArray solution that is right for you!
Applied Materials
| PROCESS |
TOOL |
TEMP RANGE °C |
RECOMMENDATION |
| DEPOSITION |
| Copper barrier seed |
Electra |
65 to 400 |
SensArray 1530 |
| Slab aluminum |
Endura |
65 to 400 |
SensArray 1530 |
| Aluminum seed |
ALPS |
65 to 400 |
SensArray 1530 |
| Tungsten liner barrier |
iLB TxZ |
65 to 400 |
SensArray 1530 |
| Ti TiN |
SIP TTN |
65 to 400 |
SensArray 1530 |
| Tungsten |
Sprint Centura; ALD W; Sprintplus 300 |
65 to 400 |
SensArray 1530 |
| TiCl4 Ti and TiN |
Tectra Centura |
65 to 600 |
SensArray 1530 |
| Degas |
Electra, Endura, Centura |
250 to 400 |
SensArray 1530 |
| Preclean |
Electra, Endura, Centura PCII PCIIe |
0 to 200 |
SensArray 1730; 2130; 2200 oxide coated wafer |
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| PECVD |
Producer S, SE |
400 to 800 |
SensArray 1530 |
| HDP CVD |
Ultima Centura |
400 to 800 |
SensArray 1530 |
| CVD Low K |
Centura |
300 to 400 |
SensArray 1530 |
| LPCVD/SACVD Cold Wall |
Producer S, SE |
300 to 500 |
SensArray 1530 |
| LPCVD Hot Wall SiN |
Centura SiNgen |
400 to 650 |
SensArray 1530 |
| LPCVD Hot Wall Si |
Centura Polygen |
400 to 650 |
SensArray 1530 |
| High K Ta2O5 |
Centura: Giga cap TanOx |
400 to 650 |
SensArray 1530 |
| Gate stack |
Centura |
300 to 650 |
SensArray 1530 |
| ETCH |
| Metal |
Centura: DPS Plus |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: DPS II 300 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: ETCH II |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Silicon |
Centuras: DPS Plus |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: DPS300 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: HART |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: Etch II |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Oxide |
Centura: eMax |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: Super E |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
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Centura: Etch IPS |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| FLAT PANEL |
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AKT-5500 |
200 to 400 |
2010 |
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AKT-10K; AKT-15 |
200 to 400 |
2010 |
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Applied Komatsu
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Dainippon Screen
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FSI
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Lam Research
| PROCESS |
TOOL |
TEMP RANGE °C |
RECOMMENDATION |
| ETCH |
| Oxide |
Exelan 2300 |
65 to 125 |
2130, 2140, 2200 |
| Metal |
Versys Metal TCP |
65 to 125 |
2130, 2140, 2200 |
| Silicon |
Versys Silicon TCP |
65 to 125 |
2130, 2140, 2200 |
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Mattson
| PROCESS |
TOOL |
TEMP RANGE °C |
RECOMMENDATION |
| THERMAL |
| RTP |
3000 RTP |
400 to 1100 |
SensArray 1530 |
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2900 RTP |
400 to 1100 |
SensArray 1530 |
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2800 RTP |
400 to 1100 |
SensArray 1530 |
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2800cs RTP |
400 to 1100 |
SensArray 1530 |
| DEPOSITION |
| EPI |
EpiPro |
800 to 1100 |
SensArray 1530 |
| PECVD |
ASPEN II CVD |
400 to 650 |
SensArray 1530 |
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ASPEN III CVD |
400 to 650 |
SensArray 1530 |
| ETCH |
| Plasma Resist Strip |
Aspen II strip |
65 to 140;
400 for 2140 |
2130; 2140; 2200 |
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Aspen III strip |
65 to 140;
400 for 2140 |
2130; 2140; 2200 |
| ICP Isotropic |
Aspen II Lite etch |
65 to 140;
400 for 2140 |
2130; 2140; 2200 |
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Aspen III Lite etch |
65 to 140;
400 for 2140 |
2130; 2140; 2200 |
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Metron
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Novellus
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Tegal
| PROCESS |
TOOL |
TEMP RANGE °C |
RECOMMENDATION |
| ETCH |
| Poly Etch |
6510 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Metal Etch |
6520 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Pt, PZT, SBT, BST, STO |
6540 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| GMR Head Etch |
6550 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Plasma Etch |
900 |
65 to 140;
400 for 2140 |
2130, 2140, 2200 |
| Plasma Strip |
|
250 to 400 |
2130, 2140 |
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Tokyo Electron
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